Growth of bulk AlN and GaN single crystals by sublimation
- North Carolina State Univ., Raleigh, NC (United States)
Single crystals of AlN to 1 mm thickness were grown in the range 1,950--2,250 C on 10 x 10 mm{sup 2} {alpha}(6H)-SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AlN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm--1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH{sub 3}) flow. Optical microscopy, Raman and photoluminescence results are shown.
- Sponsoring Organization:
- Office of Naval Research, Washington, DC (United States)
- OSTI ID:
- 580958
- Report Number(s):
- CONF-961202-; ISBN 1-55899-353-3; TRN: IM9807%%110
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
- Country of Publication:
- United States
- Language:
- English
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