Charge collected by diffusion from an ion track under mixed boundary conditions
- Jet Propulsion Lab., Pasadena, CA (United States)
This paper analyzes charge-carrier diffusion from an ion track in a silicon substrate, at least a few hundred {mu}m thick. The substrate upper surface is treated as reflective except for a small section, intended to represent a reverse-biased junction, which is treated as a sink. Total charge collected by the sink is calculated by assuming transport to be governed by an ambipolar diffusion equation with temporally constant and spatially uniform carrier lifetime and diffusion coefficient. Present results apply to a normally incident track but could easily be generalized to arbitrary track direction. The collected charge is found to depend on track length and on the electrostatic capacitance, rather than the area, of the sink. Theoretical prediction are compared to the results of a numerical simulation called the Poisson and Continuity Equation Solver (PISCES) for three cases and are found to agree within a factor of two in the worst case.
- OSTI ID:
- 5809503
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:2; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
PARTICLE TRACKS
CHARGE COLLECTION
AMBIPOLAR DIFFUSION
BOUNDARY CONDITIONS
CAPACITANCE
COMPARATIVE EVALUATIONS
ELECTROSTATICS
IONS
NUMERICAL DATA
POISSON EQUATION
SILICON
SIMULATION
SUBSTRATES
THEORETICAL DATA
CHARGED PARTICLES
DATA
DIFFERENTIAL EQUATIONS
DIFFUSION
ELECTRICAL PROPERTIES
ELEMENTS
EQUATIONS
EVALUATION
INFORMATION
PARTIAL DIFFERENTIAL EQUATIONS
PHYSICAL PROPERTIES
SEMIMETALS
663620* - Physics of Radiations Other Than Neutrons- (1992-)
440104 - Radiation Instrumentation- High Energy Physics Instrumentation