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Title: External-cavity semiconductor laser with focusing grating mirror

Abstract

An external-cavity semiconductor laser with a focusing grating mirror (FGM), which enables a single-mode oscillation at a specified wavelength, is proposed. The optical properties of the FGM, which is a computer-generated holographic grating with chirp and bend structure, are numerically analyzed. The FGM is found to serve the functions of an optical feedback grating mirror, a focusing lens, and a narrow bandwidth wavelength filter, and its applicability towards a lensless external-cavity laser is clarified. An optimally-designed FGM for realizing laser oscillation at a specific wavelength of 1.30 {mu}m is fabricated by using a computer-controlled electron-beam writing system. The fabricated FGM with grating area of 1 {times} 1 mm{sup 2} is combined as an external feedback mirror with an InGaAsP-InP semiconductor laser of 1.3 {mu}m wavelength range, and the lasing characteristics are experimentally measured. Stable and single-mode oscillations with spectral line width less than 10 MHz, side-mode suppression ratio of 30 dB, and without low- and high-frequency intensity noise have been successfully realized at nearly the specifically designed wavelength.

Authors:
; ; ; ;  [1]
  1. Semiconductor Research Center, Matushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570 (JP)
Publication Date:
OSTI Identifier:
5771733
Resource Type:
Journal Article
Journal Name:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)
Additional Journal Information:
Journal Volume: 26:10; Journal ID: ISSN 0018-9197
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; MIRRORS; ARSENIC COMPOUNDS; COMPUTERS; FABRICATION; FEEDBACK; FOCUSING; GALLIUM COMPOUNDS; GRATINGS; HOLOGRAPHY; INDIUM COMPOUNDS; LASER CAVITIES; MONOCHROMATIC RADIATION; NEAR INFRARED RADIATION; NUMERICAL SOLUTION; PHOSPHORUS COMPOUNDS; RESONATORS; SIGNAL-TO-NOISE RATIO; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; INFRARED RADIATION; LASERS; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Asakura, H, Hori, Y, Sogawa, F, Kato, M, and Serizawa, H. External-cavity semiconductor laser with focusing grating mirror. United States: N. p., 1990. Web.
Asakura, H, Hori, Y, Sogawa, F, Kato, M, & Serizawa, H. External-cavity semiconductor laser with focusing grating mirror. United States.
Asakura, H, Hori, Y, Sogawa, F, Kato, M, and Serizawa, H. 1990. "External-cavity semiconductor laser with focusing grating mirror". United States.
@article{osti_5771733,
title = {External-cavity semiconductor laser with focusing grating mirror},
author = {Asakura, H and Hori, Y and Sogawa, F and Kato, M and Serizawa, H},
abstractNote = {An external-cavity semiconductor laser with a focusing grating mirror (FGM), which enables a single-mode oscillation at a specified wavelength, is proposed. The optical properties of the FGM, which is a computer-generated holographic grating with chirp and bend structure, are numerically analyzed. The FGM is found to serve the functions of an optical feedback grating mirror, a focusing lens, and a narrow bandwidth wavelength filter, and its applicability towards a lensless external-cavity laser is clarified. An optimally-designed FGM for realizing laser oscillation at a specific wavelength of 1.30 {mu}m is fabricated by using a computer-controlled electron-beam writing system. The fabricated FGM with grating area of 1 {times} 1 mm{sup 2} is combined as an external feedback mirror with an InGaAsP-InP semiconductor laser of 1.3 {mu}m wavelength range, and the lasing characteristics are experimentally measured. Stable and single-mode oscillations with spectral line width less than 10 MHz, side-mode suppression ratio of 30 dB, and without low- and high-frequency intensity noise have been successfully realized at nearly the specifically designed wavelength.},
doi = {},
url = {https://www.osti.gov/biblio/5771733}, journal = {IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)},
issn = {0018-9197},
number = ,
volume = 26:10,
place = {United States},
year = {Mon Oct 01 00:00:00 EDT 1990},
month = {Mon Oct 01 00:00:00 EDT 1990}
}