50 mW stable single longitudinal mode operation of a 780 nm GaAlAs DFB laser

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29285· OSTI ID:5760062

Takigawa, S; Kume, M; Hamada, K; Yoshikawa, N; Shimizu, H; Gano, G; Uno, T

Stable single longitudinal mode (SLM) operation has been attained with powers as high as 50 mW in a 780 nm GaAlAs distributed feedback laser. This excellent operation is due to the use of the buried twin-ridge substrate structure which allows the stable fundamental spatial mode operation even at high-power levels. The coupling strength designed is 0.5 from the viewpoint of obtaining a low operation current at 50 mW. The SLM operation in this laser was maintained for powers up to 50 mW at room temperature and in the temperature range from -17 to 37/sup 0/C at 50 mW. The maximum power attained was 62 mW.

• Research Organization: Electronics Research Lab., Matsushita Electronics Corp., Takatsuki, Osaka 569 (JP); Opto-Electronics Lab., Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570 (JP)
• OSTI ID: 5760062
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. 25:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FEEDBACK
COUPLING
CURRENT DENSITY
DESIGN
MODE SELECTION
OPERATION
LASERS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)