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Title: Thin film cadmium telluride solar cells. Progress report, 1 October 1983-30 September 1984

Abstract

During this reporting period, the deposition of CdTe films by the direct combination of the Cd and Te vapor on foreign substrates has been continued with emphasis on the resistivity control of p-type films and the reduction of p-CdTe/substrate interface resistance. CdTe films deposited on graphite substrates were all p-type, irrespective of the substrate temperature and the reactant composition. This result indicates that carbon is incorporated into CdTe presumably thru its reaction with Te and that carbon is electrically active in CdTe. Using W/graphite as substrates, the change in conductivity type of nearly stoichiometric films has been found to take place over a very narrow range of the reactant composition. In addition to using a Cd-deficient reactant mixture, the resistivity of p-type CdTe films may also be controlled by adding a dopant to the reactant mixture. The effect of reactant composition and substrate temperature on the resistivity of the reactant mixture was studied in detail. The effect of adding oxygen to the reactant was also investigated. Using CdTe films deposited on Corning 7059 glass substrates, the optical band gap of CdTe films was found to be 1.50 eV at room temperature. The preparation and characterization of thin film cadium telluridemore » heterojunction solar cells have been continued. The open-circuit voltage (up to 0.75V) and short-circuit current density (up to 20mA/cm/sup 2/) are reasonably reproducible; however, the high p-CdTe/substrate interface resistance remains to be a problem in the fabrication of thin film CdTe solar cells. Because of the uncontrolled series resistance, the best CdS/CdTe cells have an AM1 efficiency of about 6.5% and the best ITO/CdTe cell has an AM1 efficiency of about 8%. Further work will be directed to the use of inverted structures.« less

Authors:
Publication Date:
Research Org.:
Southern Methodist Univ., Dallas, TX (USA)
OSTI Identifier:
5750003
Report Number(s):
SERI/STR-211-2673
ON: DE85008803
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CADMIUM TELLURIDE SOLAR CELLS; FABRICATION; RESEARCH PROGRAMS; TESTING; CADMIUM OXIDES; CADMIUM SULFIDES; CHEMICAL VAPOR DEPOSITION; DESIGN; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; OPTICAL PROPERTIES; SYSTEMS ANALYSIS; THIN FILMS; CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; EQUIPMENT; FILMS; INORGANIC PHOSPHORS; JUNCTIONS; OXIDES; OXYGEN COMPOUNDS; PHOSPHORS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SOLAR EQUIPMENT; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Chu, T L. Thin film cadmium telluride solar cells. Progress report, 1 October 1983-30 September 1984. United States: N. p., 1985. Web.
Chu, T L. Thin film cadmium telluride solar cells. Progress report, 1 October 1983-30 September 1984. United States.
Chu, T L. 1985. "Thin film cadmium telluride solar cells. Progress report, 1 October 1983-30 September 1984". United States.
@article{osti_5750003,
title = {Thin film cadmium telluride solar cells. Progress report, 1 October 1983-30 September 1984},
author = {Chu, T L},
abstractNote = {During this reporting period, the deposition of CdTe films by the direct combination of the Cd and Te vapor on foreign substrates has been continued with emphasis on the resistivity control of p-type films and the reduction of p-CdTe/substrate interface resistance. CdTe films deposited on graphite substrates were all p-type, irrespective of the substrate temperature and the reactant composition. This result indicates that carbon is incorporated into CdTe presumably thru its reaction with Te and that carbon is electrically active in CdTe. Using W/graphite as substrates, the change in conductivity type of nearly stoichiometric films has been found to take place over a very narrow range of the reactant composition. In addition to using a Cd-deficient reactant mixture, the resistivity of p-type CdTe films may also be controlled by adding a dopant to the reactant mixture. The effect of reactant composition and substrate temperature on the resistivity of the reactant mixture was studied in detail. The effect of adding oxygen to the reactant was also investigated. Using CdTe films deposited on Corning 7059 glass substrates, the optical band gap of CdTe films was found to be 1.50 eV at room temperature. The preparation and characterization of thin film cadium telluride heterojunction solar cells have been continued. The open-circuit voltage (up to 0.75V) and short-circuit current density (up to 20mA/cm/sup 2/) are reasonably reproducible; however, the high p-CdTe/substrate interface resistance remains to be a problem in the fabrication of thin film CdTe solar cells. Because of the uncontrolled series resistance, the best CdS/CdTe cells have an AM1 efficiency of about 6.5% and the best ITO/CdTe cell has an AM1 efficiency of about 8%. Further work will be directed to the use of inverted structures.},
doi = {},
url = {https://www.osti.gov/biblio/5750003}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Apr 01 00:00:00 EST 1985},
month = {Mon Apr 01 00:00:00 EST 1985}
}

Technical Report:
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