A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S
Abstract
Data are presented for the CD4000 family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to low dose-rate ionizing radiation than that observed with ''conventional rate'' (approximately 10/sup 6/ rad(Si)/hr) /sup 60/Co testing. Data obtained using conventional rate /sup 60/Co irradiations followed by either a 24-hour, high-temperature (100/sup 0/C) anneal or a 65-day, room temperature anneal are in good agreement with data obtained by exposing similar parts at a low dose-accumulation rate (daily 17second, 5000 rad(Si) exposures) for 200 consecutive days. Graphs of thresholds, output drive, and propagation delay for both low doseaccumulation rate and conventional rate exposures are included.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Laboratories, Electromagnetic Applications Division 2322, Albuquerque, NM 87185
- OSTI Identifier:
- 5711908
- Resource Type:
- Journal Article
- Journal Name:
- IEEE Trans. Nucl. Sci.; (United States)
- Additional Journal Information:
- Journal Volume: NS-31:6
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; INTEGRATED CIRCUITS; PHYSICAL RADIATION EFFECTS; ANNEALING; COBALT 60; DOSE RATES; EXPERIMENTAL DATA; GRAPHS; IONIZING RADIATIONS; IRRADIATION; MEDIUM TEMPERATURE; MOS TRANSISTORS; PERFORMANCE TESTING; SILICON; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; DATA; ELECTRONIC CIRCUITS; ELEMENTS; HEAT TREATMENTS; INFORMATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MICROELECTRONIC CIRCUITS; MINUTES LIVING RADIOISOTOPES; NUCLEI; NUMERICAL DATA; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SEMIMETALS; TESTING; TRANSISTORS; YEARS LIVING RADIOISOTOPES; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
Citation Formats
Roeske, S B, Edwards, W H, Gammill, P E, Puariea, J W, and Zipay, J W. A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S. United States: N. p., 1984.
Web. doi:10.1109/TNS.1984.4333556.
Roeske, S B, Edwards, W H, Gammill, P E, Puariea, J W, & Zipay, J W. A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S. United States. https://doi.org/10.1109/TNS.1984.4333556
Roeske, S B, Edwards, W H, Gammill, P E, Puariea, J W, and Zipay, J W. 1984.
"A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S". United States. https://doi.org/10.1109/TNS.1984.4333556.
@article{osti_5711908,
title = {A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S},
author = {Roeske, S B and Edwards, W H and Gammill, P E and Puariea, J W and Zipay, J W},
abstractNote = {Data are presented for the CD4000 family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to low dose-rate ionizing radiation than that observed with ''conventional rate'' (approximately 10/sup 6/ rad(Si)/hr) /sup 60/Co testing. Data obtained using conventional rate /sup 60/Co irradiations followed by either a 24-hour, high-temperature (100/sup 0/C) anneal or a 65-day, room temperature anneal are in good agreement with data obtained by exposing similar parts at a low dose-accumulation rate (daily 17second, 5000 rad(Si) exposures) for 200 consecutive days. Graphs of thresholds, output drive, and propagation delay for both low doseaccumulation rate and conventional rate exposures are included.},
doi = {10.1109/TNS.1984.4333556},
url = {https://www.osti.gov/biblio/5711908},
journal = {IEEE Trans. Nucl. Sci.; (United States)},
number = ,
volume = NS-31:6,
place = {United States},
year = {Sat Dec 01 00:00:00 EST 1984},
month = {Sat Dec 01 00:00:00 EST 1984}
}
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