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Title: A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S

Abstract

Data are presented for the CD4000 family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to low dose-rate ionizing radiation than that observed with ''conventional rate'' (approximately 10/sup 6/ rad(Si)/hr) /sup 60/Co testing. Data obtained using conventional rate /sup 60/Co irradiations followed by either a 24-hour, high-temperature (100/sup 0/C) anneal or a 65-day, room temperature anneal are in good agreement with data obtained by exposing similar parts at a low dose-accumulation rate (daily 17second, 5000 rad(Si) exposures) for 200 consecutive days. Graphs of thresholds, output drive, and propagation delay for both low doseaccumulation rate and conventional rate exposures are included.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories, Electromagnetic Applications Division 2322, Albuquerque, NM 87185
OSTI Identifier:
5711908
Resource Type:
Journal Article
Journal Name:
IEEE Trans. Nucl. Sci.; (United States)
Additional Journal Information:
Journal Volume: NS-31:6
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; INTEGRATED CIRCUITS; PHYSICAL RADIATION EFFECTS; ANNEALING; COBALT 60; DOSE RATES; EXPERIMENTAL DATA; GRAPHS; IONIZING RADIATIONS; IRRADIATION; MEDIUM TEMPERATURE; MOS TRANSISTORS; PERFORMANCE TESTING; SILICON; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; DATA; ELECTRONIC CIRCUITS; ELEMENTS; HEAT TREATMENTS; INFORMATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MICROELECTRONIC CIRCUITS; MINUTES LIVING RADIOISOTOPES; NUCLEI; NUMERICAL DATA; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SEMIMETALS; TESTING; TRANSISTORS; YEARS LIVING RADIOISOTOPES; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Roeske, S B, Edwards, W H, Gammill, P E, Puariea, J W, and Zipay, J W. A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S. United States: N. p., 1984. Web. doi:10.1109/TNS.1984.4333556.
Roeske, S B, Edwards, W H, Gammill, P E, Puariea, J W, & Zipay, J W. A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S. United States. https://doi.org/10.1109/TNS.1984.4333556
Roeske, S B, Edwards, W H, Gammill, P E, Puariea, J W, and Zipay, J W. 1984. "A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S". United States. https://doi.org/10.1109/TNS.1984.4333556.
@article{osti_5711908,
title = {A comparison of conventional /sup 60/Co testing and low dose-accumulation-rate exposure of metal-gate CMOS IC'S},
author = {Roeske, S B and Edwards, W H and Gammill, P E and Puariea, J W and Zipay, J W},
abstractNote = {Data are presented for the CD4000 family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to low dose-rate ionizing radiation than that observed with ''conventional rate'' (approximately 10/sup 6/ rad(Si)/hr) /sup 60/Co testing. Data obtained using conventional rate /sup 60/Co irradiations followed by either a 24-hour, high-temperature (100/sup 0/C) anneal or a 65-day, room temperature anneal are in good agreement with data obtained by exposing similar parts at a low dose-accumulation rate (daily 17second, 5000 rad(Si) exposures) for 200 consecutive days. Graphs of thresholds, output drive, and propagation delay for both low doseaccumulation rate and conventional rate exposures are included.},
doi = {10.1109/TNS.1984.4333556},
url = {https://www.osti.gov/biblio/5711908}, journal = {IEEE Trans. Nucl. Sci.; (United States)},
number = ,
volume = NS-31:6,
place = {United States},
year = {Sat Dec 01 00:00:00 EST 1984},
month = {Sat Dec 01 00:00:00 EST 1984}
}