Method of producing thin films of silicon

Patent · Wed Dec 25 00:00:00 EST 1985

OSTI ID:5701386

Tanaka, K; Matsuda, A; Yoshida, T

A method of producing thin films of silicon is characterized in that a p-type or n-type thin film of doped silicon having a dopant or impurity element is placed in a plasma atmosphere of elements selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen, whereby the concentration of an impurity element in the thin film is decreased adjacent to the surface of thin film and accordingly the impurity element is replaced by the plasma element adjacent to the surface of the thin film.

• Assignee: Agency of Industrial Science and Technology (Japan)
• Patent Number(s): US 4490208
• Application Number: TRN: 85-011663
• OSTI ID: 5701386
• Resource Relation: Patent Priority Date: Priority date 1 Jul 1982, Japan; Other Information: PAT-APPL-394074
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
IMPURITIES
REMOVAL
SILICON
PURIFICATION
THIN FILMS
FABRICATION
BROMINE
CHLORINE
DOPED MATERIALS
FLUORINE
HYDROGEN
IODINE
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PLASMA
ELEMENTS
FILMS
HALOGENS
MATERIALS
NONMETALS
SEMICONDUCTOR MATERIALS
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture