Preparation and properties of boron thin films
Journal Article
·
· Journal of Solid State Chemistry
- Shinshu Univ., Nagano (Japan); and others
Boron thin films were prepared by plasma assisted chemical vapor deposition. The source gas was boron trichloride (BCl{sub 3}). Ring patterns of transmission electron beam diffraction indicated that films were polycrystalline {alpha}-rhombohedral boron. Optical absorption edge was estimated from absorption spectrum. The absorption edge was about 1.05 eV for the films deposited at 700{degrees}C and was increased to about 1.4 eV as the deposition temperature increased to higher than 800{degrees}C. The Hall mobility was 10{sup -4}-10{sup -1} cm{sup 2}/Vs and the carrier concentration was 10{sup 16}-10{sup 18} cm{sup -3}. All films showed p-type conduction. The piezoresistive gauge factor was about 10.
- OSTI ID:
- 569522
- Journal Information:
- Journal of Solid State Chemistry, Vol. 133, Issue 1; Other Information: PBD: Oct 1997
- Country of Publication:
- United States
- Language:
- English
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