High gain photoconductive semiconductor switching

Conference · Tue Jan 01 00:00:00 EST 1991

OSTI ID:5677377

Zutavern, F J; Loubriel, G M; O'Malley, M W; Helgeson, W D; McLaughlin, D L

Switching properties are reported for high gain photoconductive semiconductor switches (PCSS). A 200 ps pulse width laser was used in tests to examine the relations between electric field, rise time, delay, and minimum optical trigger energy for switches which reached 80 kV in a 50 {Omega} transmission line with rise times as short as 600 ps. Infrared photoluminescence was imaged during high gain switching providing direct evidence for current filamentation. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. 16 refs., 10 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: USDOD; USDOE; Department of Defense, Washington, DC (United States); USDOE, Washington, DC (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5677377
• Report Number(s): SAND-90-2813C; CONF-910640-12; ON: DE91014668
• Resource Relation: Conference: 8. IEEE pulsed power conference, San Diego, CA (United States), 17-19 Jun 1991
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
SEMICONDUCTOR SWITCHES
TESTING
CAMERAS
ELECTRIC FIELDS
GALLIUM ARSENIDES
LASERS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
PULSE RISE TIME
PULSE TECHNIQUES
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
GALLIUM COMPOUNDS
LUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SWITCHES
TIMING PROPERTIES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360603 - Materials- Properties