Dual-ion-beam sputter deposition of TiN films

Journal Article · Wed May 15 00:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347596· OSTI ID:5662069

Valentini, A; Quaranta, F; Penza, M ^[1]; Vasanelli, L ^[2]; Battaglin, G ^[3]

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1. Dipartimento di Fisica, Universita e Unita GNSM/CISM, Via Amendola 173, 70126 Bari, Italy (IT)
2. Dipartimento di Scienza dei Materiali, Universita e Unita GNSM/CISM, Via Arnesano, 73100 Lecce, (Italy)
3. Dipartimento di Chimica fisica, Calle Larga S. Marta 2137, 30123 Venezia, (Italy)

A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of {ital N}{sup +}{sub 2} ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.

• OSTI ID: 5662069
• Journal Information: Journal of Applied Physics; (USA), Vol. 69:10; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
TITANIUM NITRIDES
SPUTTERING
ION BEAMS
NITROGEN IONS
BEAMS
CHARGED PARTICLES
IONS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)