Composition/bandgap selective dry photochemical etching of semiconductor materials
Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy
- Application Number:
- ON: DE86013758
- OSTI ID:
- 5660460
- Country of Publication:
- United States
- Language:
- English
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