Electron-beam-induced information storage in hydrogenated amorphous silicon devices

Patent · Mon Mar 18 00:00:00 EST 1985

OSTI ID:5656732

Yacobi, B G

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

• Research Organization: Solar Energy Research Inst. (SERI), Golden, CO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: Dept. of Energy
• Application Number: ON: DE86013791
• OSTI ID: 5656732
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ELECTRON PROBES
DESIGN
AMORPHOUS STATE
DEFECTS
SCANNING ELECTRON MICROSCOPY
SILICON
SUBSTRATES
ELECTRON MICROSCOPY
ELEMENTS
MICROSCOPY
PROBES
SEMIMETALS
420800* - Engineering- Electronic Circuits & Devices- (-1989)