skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

Abstract

A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B{sub 2}H{sub 6} and C{sub 2}H{sub 4}. By increasing the boron doping ratio (B{sub 2}H{sub 6}/C{sub 2}H{sub 4}) from 0 to 12000 ppm, the dark conductivity increased from {approximately}10{sup {minus}9} to {approximately}10{sup {minus}7} S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3{times}10{sup {minus}8} S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-{Angstrom}-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 {Angstrom})/p-a-SiC (40 {Angstrom}) double p-layer structure. The thin ({lt}15 {Angstrom}) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. {copyright} {ital 1998 American Institute of Physics.}

Authors:
;  [1]
  1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701 (Korea)
Publication Date:
OSTI Identifier:
565581
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 72; Journal Issue: 1; Other Information: PBD: Jan 1998
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON; SOLAR CELLS; ENERGY GAP; HYDROGEN; BORON; SILICON SOLAR CELLS; WINDOWS; CARBON; AMORPHOUS STATE; DOPED MATERIALS; BORON ADDITIONS; CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; THIN FILMS

Citation Formats

Lee, C H, and Lim, K S. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells. United States: N. p., 1998. Web. doi:10.1063/1.120659.
Lee, C H, & Lim, K S. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells. United States. https://doi.org/10.1063/1.120659
Lee, C H, and Lim, K S. 1998. "Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells". United States. https://doi.org/10.1063/1.120659.
@article{osti_565581,
title = {Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells},
author = {Lee, C H and Lim, K S},
abstractNote = {A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B{sub 2}H{sub 6} and C{sub 2}H{sub 4}. By increasing the boron doping ratio (B{sub 2}H{sub 6}/C{sub 2}H{sub 4}) from 0 to 12000 ppm, the dark conductivity increased from {approximately}10{sup {minus}9} to {approximately}10{sup {minus}7} S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3{times}10{sup {minus}8} S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-{Angstrom}-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 {Angstrom})/p-a-SiC (40 {Angstrom}) double p-layer structure. The thin ({lt}15 {Angstrom}) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. {copyright} {ital 1998 American Institute of Physics.}},
doi = {10.1063/1.120659},
url = {https://www.osti.gov/biblio/565581}, journal = {Applied Physics Letters},
number = 1,
volume = 72,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1998},
month = {Thu Jan 01 00:00:00 EST 1998}
}