Diffusion of electronic defects in calcia-stabilized zirconia from a desorption rate study
- Dept. of Materials Science and Engineering, Univ. of New South Wales, Kensington (AU)
- Atlantic Research Lab., National Research Council, Halifax, Nova Scotia, B3H 3Z1 (CA)
- Dept. of Chemistry, Dalhousie Univ., Halifax, Nova Scotia, B3H 4J3 (CA)
This paper reports on rates of desorption of oxygen from samples of calcis-stabilized zirconia (CSZ) measured as a function of oxygen saturation pressure, of temperature, and of the impurity content of CSZ. The results have been interpreted to determine the diffusion coefficient, {ital D}, for electronic defects in CSZ. {ital D} was independent of the oxygen saturation pressure from 0.5 to 101 kPa. The activation energy was 88 kJ/mol for one sample from 1228 to 1577 K and 113 kJ/mol for another from 1515 to 1667 K. {ital D} was inversely proportional to the iron impurity concentration in the CSZ. This observation was interpreted in terms of a mechanism in which electron holes were trapped by iron impurity sites.
- OSTI ID:
- 5645538
- Journal Information:
- Journal of the Electrochemical Society; (United States), Vol. 137:11; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
OXYGEN
DESORPTION
ZIRCONIUM OXIDES
ELECTRONIC STRUCTURE
ACTIVATION ENERGY
ATOM TRANSPORT
CALCIUM ADDITIONS
IMPURITIES
IRON
TRAPPED ELECTRONS
ALLOYS
CALCIUM ALLOYS
CHALCOGENIDES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
LEPTONS
METALS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
OXIDES
OXYGEN COMPOUNDS
RADIATION TRANSPORT
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
ZIRCONIUM COMPOUNDS
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies