Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing
Abstract
The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min. 9 references.
- Authors:
- Publication Date:
- Research Org.:
- Cincinnati Univ., OH
- OSTI Identifier:
- 5631851
- Report Number(s):
- CONF-841218-
Journal ID: CODEN: JVTAD
- Resource Type:
- Conference
- Journal Name:
- J. Vac. Sci. Technol., A; (United States)
- Additional Journal Information:
- Journal Volume: 3; Conference: 31. national vacuum symposium, Reno, NV, USA, 3 Dec 1984
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; SURFACE FINISHING; SILICON NITRIDES; PLASMA ARC SPRAYING; ANNEALING; ELECTRIC CONDUCTIVITY; THIN FILMS; ARSENIC COMPOUNDS; ARSENIDES; DEPOSITION; ELECTRICAL PROPERTIES; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SPRAY COATING; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Valco, G J, and Kapoor, V J. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing. United States: N. p., 1985.
Web.
Valco, G J, & Kapoor, V J. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing. United States.
Valco, G J, and Kapoor, V J. 1985.
"Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing". United States.
@article{osti_5631851,
title = {Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing},
author = {Valco, G J and Kapoor, V J},
abstractNote = {The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min. 9 references.},
doi = {},
url = {https://www.osti.gov/biblio/5631851},
journal = {J. Vac. Sci. Technol., A; (United States)},
number = ,
volume = 3,
place = {United States},
year = {Sat Jun 01 00:00:00 EDT 1985},
month = {Sat Jun 01 00:00:00 EDT 1985}
}