Oxygen, carbon, hydrogen and nitrogen in crystalline silicon
Conference
·
OSTI ID:5616385
These proceedings collect papers on interstitial material in silicon. Topics include: hydrogen in crystalline silicon, low energy hydrogen ion bombarded silicon, oxygen in silicon, oxygen thermal donor formation, thermal donor generation and annihilation effects on oxygen precipitation oxygen effects on plastic flow during growth of dendrixic web silicon, nitrogen in silicon, off-center nitrogen and oxygen in silicon, and thermal donor hierarchies in silicon and germanium.
- OSTI ID:
- 5616385
- Report Number(s):
- CONF-8512141-
- Resource Relation:
- Conference: Oxygen, carbon, hydrogen and nitrogen in crystalline silicon, Boston, MA, USA, 2-5 Dec 1985; Related Information: Materials Research Society symposia proceedings. Volume 59
- Country of Publication:
- United States
- Language:
- English
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