A bias voltage dependence of trapped hole annealing and its measurement technique
- National Space Development Agency, Tokyo (Japan)
This paper reports on a bias voltage dependence of the trapped hole annealing that was observed by using a unique irradiation technique with a MOS capacitor which exhibits almost no annealing of the trapped holes at negative bias condition. The result showed the change of time scale for the annealing behavior with the Boltzmann's factor as a function of surface potential of the substrate. This result suggests that the oxide of the MOS capacitor has trap level positioned above the Si conduction band edge. Additional annealing experiment at several temperatures supported the results and the position of the trap level was determined. The trap level confirmed may be one of commonly observed levels, although it is a special case that the MOS capacitor has only the trap level.
- OSTI ID:
- 5614162
- Report Number(s):
- CONF-910751-; CODEN: IETNA
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:6; Conference: Institute of Electrical and Electronic Engineers (IEEE) annual international nuclear and space radiation effects conference, San Diego, CA (United States), 15-19 Jul 1991; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
MOS TRANSISTORS
ANNEALING
OXIDES
TRAPS
BOLTZMANN EQUATION
CAPACITORS
ELECTRIC POTENTIAL
HEAT TREATMENTS
HOLES
SUBSTRATES
SURFACE POTENTIAL
CHALCOGENIDES
DIFFERENTIAL EQUATIONS
ELECTRICAL EQUIPMENT
EQUATIONS
EQUIPMENT
OXYGEN COMPOUNDS
PARTIAL DIFFERENTIAL EQUATIONS
POTENTIALS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
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