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Title: Development of a polysilicon process based on chemical vapor deposition (Phase 1 and Phase 2). Final report, 6 October 1979-25 June 1982

Technical Report ·
DOI:https://doi.org/10.2172/5584216· OSTI ID:5584216

The goal of this program was to demonstrate that a dichlorosilane based reductive chemical vapor deposition (CVD) process is capable of producing a high-purity, low-cost polycrystalline silicon. Physical form and purity of this material was to be consistent with FSA material requirements for manufacturing high efficiency solar cells. The feasibility phase (Phase 1) provided information through laboratory experiments relating to the kinetics of trichlorosilane redistribution, catalyst behavior, and decomposition characteristics of dichlorosilane. Of particular importance, Dowex MWA-1 was shown to be an effective redistribution catalyst at moderate temperatures and very few reactor related operational problems were observed during dichlorosilane decomposition. The demonstration phase (Phase 2) evaluated technology developed during Phase 1 at a dichlorosilane production and decomposition scale sufficient to allow scale-up for the Experimental Process System Development Unit (EPSDU). Catalyst life, polysilicon deposition rate, and product purity were established as acceptable in addition to defining process limitations. An economic analysis was completed for a 1000 metric ton per year commercial facility using Hemlock Semiconductor's Polysilicon Process Based On Chemical Vapor Deposition. This analysis indicated that polycrystalline silicon of semiconductor quality could be produced at a price of $20.27 per kilogram.

Research Organization:
Hemlock Semiconductor Corp., MI (USA)
DOE Contract Number:
NAS-7-100-955533
OSTI ID:
5584216
Report Number(s):
DOE/JPL/955533-83/7; ON: DE84004975
Resource Relation:
Other Information: Portions are illegible in microfiche products. Original copy available until stock is exhausted
Country of Publication:
United States
Language:
English