Influence of germanium on the formation of thermal donors in silicon

Journal Article · Sun Mar 01 00:00:00 EST 1987 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5576112

Dashevskii, M Ya; Dokuchaeva, A A; Anisimov, K I

In silicon samples doped with germanium to a concentration 5 x 10/sup 19/-10/sup 20/ cm/sup -3/ after heat treatment at 450/sup 0/C the breakdown of the thermal donors and restoration of the electrical resistivity to a value close to the resistivity of the unannealed samples, proceed faster, than in samples not doped with germanium. It is indirectly confirmed by the assumption that the oxygen solubility in germanium-doped silicon samples is higher at 450/sup 0/C than in the undoped samples.

• Research Organization: Moscow Institute of Steel and Alloys, USSR
• OSTI ID: 5576112
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 22:10; Other Information: Translated from Izv. Akad. Nauk. SSSR, Neorg. Mater.; 22: No. 10, 1599-1601(Oct 1986)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
METALLURGICAL EFFECTS
GERMANIUM ALLOYS
ELECTRIC CONDUCTIVITY
SILICON
CRYSTAL DOPING
HEAT TREATMENTS
SILICON ALLOYS
CHARGE CARRIERS
OXYGEN
SOLUBILITY
TEMPERATURE EFFECTS
THERMOELECTRIC PROPERTIES
TIME DEPENDENCE
ALLOYS
ELECTRICAL PROPERTIES
ELEMENTS
METALS
NONMETALS
PHYSICAL PROPERTIES
SEMIMETALS
360102* - Metals & Alloys- Structure & Phase Studies
360104 - Metals & Alloys- Physical Properties