Determination of the surface isoelectric point of oxide films on metals by contact angle titration
- Virginia Polytechnic Inst. and State Univ., Blacksburg, VA (United States)
The surface isoelectric point for the native air-formed oxide films on aluminum, chromium, and tantalum has been determined by measurement of contact angles at the hexadecane/aqueous solution interface as a function of pH of the aqueous phase. Application of Young`s equation, the Gibbs equation, and surface equilibria conditions for hydroxylated oxide films leads to a mathematical expression which shows that the contact angle goes through a maximum at the isoelectric point of the oxide. The experimentally determined isoelectric point of oxide-covered chromium is 5.2 to 5.3, of oxide-covered aluminum is 9.5, and of oxide-covered tantalum is approximately {minus}0.7. These values for the oxide films are within one to three pH units of the reported isoelectric points for the corresponding bulk oxide powders. The oxide-covered metal surfaces were cleaned by argon plasma treatment prior to measurement of contact angles, in that XPS measurements showed this treatment to be effective in reducing the thickness of the carbon contamination layer. In addition, interfacial tensions were measured at the hexadecane/aqueous solution interface and were observed to have only a slight dependence on the pH of the aqueous phase.
- OSTI ID:
- 556672
- Journal Information:
- Journal of Colloid and Interface Science, Vol. 194, Issue 2; Other Information: PBD: 15 Oct 1997
- Country of Publication:
- United States
- Language:
- English
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