Low temperature synthesis of high purity monoclinic celsian using topaz

Patent · Tue Feb 19 00:00:00 EST 1991

OSTI ID:5554916

Talmy, I G; Haught, D A

This patent describes a process for preparing monoclinic BaO {center dot} Al{sub 2}O{sub 3} {center dot} 2SiO{sub 2}. It comprises: forming an intimate reaction mixture of powders of topaz and BaCO{sub 3} wherein the molar ratio of topaz to BaCO{sub 3} is from 2:1 to 4:1; and heating the reaction mixture to initiate a celsian formation reaction, in an atmosphere of gases generated by the celsian formation reaction, at a temperature in the range of from 900{degrees} C. to less than 1590{degrees} C. until the monoclinic celsian is produced.

• Assignee: Secretary of the Navy, Washington, DC (USA)
• Patent Number(s): US 4994419; A
• Application Number: PPN: US 7-580012
• OSTI ID: 5554916
• Resource Relation: Patent File Date: 7 Sep 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
SYNTHESIS
BARIUM OXIDES
SILICON OXIDES
MINERALS
MONOCLINIC LATTICES
ALKALINE EARTH METAL COMPOUNDS
ALUMINIUM COMPOUNDS
BARIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication