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Title: Status of the GEC RF Reference Cell/laser diagnostics of plasma etching discharges

Conference ·
OSTI ID:5552973

The Gaseous Electronics Conference (GEC) RF Reference Cell was developed to enhance studies of radiofrequency (rf) discharge systems analogous to those used to fabricate microelectronic devices. The Reference Cell concept includes both a standard discharge-chamber design and a set of diagnostic tools that can be used to verify that different Cells behave similarly. Voltage and current measurements in Reference Cells in the United States show that, with proper care, plasmas that behave in a similar manner can be generated in different Cells. The versatility of the Reference Cell is illustrated by results on the use of planar laser-induced fluorescence imaging to obtain two-dimensional spatial profiles of SO{sub 2} in an SF{sub 6}/O{sub 2} rf discharge. 4 refs., 5 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5552973
Report Number(s):
SAND-91-1113C; CONF-9106212-1; ON: DE91014108
Resource Relation:
Conference: International seminar on reactive plasmas, Nagoya (Japan), 17-19 Jun 1991
Country of Publication:
United States
Language:
English