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Title: Midgap traps related to compensation processes in CdTe alloys

Abstract

We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd{sub 0.8}Zn{sub 0.2}Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. {copyright} {ital 1997} {ital The American Physical Society}

Authors:
; ;  [1]; ;  [2]
  1. INFM and Department of Physics, University of Bologna, Viale Berti Pichat 6/2, 40126 Bologna (Italy)
  2. Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, E-28040 Madrid (Spain)
Publication Date:
OSTI Identifier:
554359
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 56; Journal Issue: 23; Other Information: PBD: Dec 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM TELLURIDES; CATHODOLUMINESCENCE; ELECTRICAL PROPERTIES; CADMIUM ALLOYS; TELLURIUM ALLOYS; BINARY ALLOY SYSTEMS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP

Citation Formats

Castaldini, A, Cavallini, A, Fraboni, B, Fernandez, P, and Piqueras, J. Midgap traps related to compensation processes in CdTe alloys. United States: N. p., 1997. Web. doi:10.1103/PhysRevB.56.14897.
Castaldini, A, Cavallini, A, Fraboni, B, Fernandez, P, & Piqueras, J. Midgap traps related to compensation processes in CdTe alloys. United States. https://doi.org/10.1103/PhysRevB.56.14897
Castaldini, A, Cavallini, A, Fraboni, B, Fernandez, P, and Piqueras, J. 1997. "Midgap traps related to compensation processes in CdTe alloys". United States. https://doi.org/10.1103/PhysRevB.56.14897.
@article{osti_554359,
title = {Midgap traps related to compensation processes in CdTe alloys},
author = {Castaldini, A and Cavallini, A and Fraboni, B and Fernandez, P and Piqueras, J},
abstractNote = {We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd{sub 0.8}Zn{sub 0.2}Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. {copyright} {ital 1997} {ital The American Physical Society}},
doi = {10.1103/PhysRevB.56.14897},
url = {https://www.osti.gov/biblio/554359}, journal = {Physical Review, B: Condensed Matter},
number = 23,
volume = 56,
place = {United States},
year = {Mon Dec 01 00:00:00 EST 1997},
month = {Mon Dec 01 00:00:00 EST 1997}
}