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Title: Amorphous silicon photovoltaic devices prepared by chemical and photochemical vapor deposition of higher order silanes. Technical progress report, 1 September 1984-28 February 1985

Technical Report ·
OSTI ID:5533191

This report describes the preparation of hydrogenated amorphous silicon (a-Si:H) films and photovoltaic devices by chemical vapor deposition (CVD) from higher order silanes, and the properties of such films and devices. The research is directed at exploring new, improved deposition techniques to produce a-Si:H. The improvement could stem from ease of deposition (lower cost and/or better reproducibility), from material improvement (higher efficiency and/or better stability under illumination), or from innovative materials that improve device performance. Research efforts have focused, therefore, on photo-CVD techniques; thermal CVD has been emphasized. This report summarizes the properties of the experimental thermal CVD films and the reasons for terminating the research in this area. In addition, the results for deposition by mercury-sensitized decomposition of disilane are presented. These results indicate that this technique is a very promising alternative to the glow-discharge method.

Research Organization:
Chronar Corp., Princeton, NJ (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5533191
Report Number(s):
SERI/STR-211-2703; ON: DE85012139
Country of Publication:
United States
Language:
English