Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs

Journal Article · Mon Dec 01 00:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366302· OSTI ID:552958

Gaber, A; Zillgen, H; Ehrhart, P ^[1]; Partyka, P; Averback, R S ^[2]

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1. Institut fuer Festkoerperforschung, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)
2. Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

X-ray diffraction was employed to investigate damage accumulation and the subsequent thermally activated annealing reactions in AlAs layers on GaAs substrates. Irradiations were performed at 4.6 K with 2.5 MeV electrons up to a total dose of 2{times}10{sup 19} electrons/cm{sup 2}. The irradiation-induced increase of the lattice parameter amounts to about half of the changes observed in the GaAs substrates. There is a major annealing step near room temperature, a rather continuous annealing up to 500 K, and a final recovery stage between 700 and 900 K. The observations are discussed in relation to the resistance of AlAs against amorphization under ion irradiation. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 552958
• Journal Information: Journal of Applied Physics, Vol. 82, Issue 11; Other Information: PBD: Dec 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
RADIATION EFFECTS
ALUMINIUM COMPOUNDS
X-RAY DIFFRACTION
INTERSTITIALS
POINT DEFECTS
LATTICE PARAMETERS
ELECTRON BEAMS
MEV RANGE 01-10
ANNEALING
FRENKEL DEFECTS