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Title: An electron beam induced current study of gallium nitride and diamond materials

Abstract

The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide-bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in Gallium Nitride (GaN) and Diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behavior of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in Gallium Nitride (GaN) and Diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experimental techniques because it is based on a fast transient electron beam probe created from a high speed, laser pulsed photoemission system.

Authors:
;  [1]; ;  [2]
  1. Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)
  2. Morgan State Univ., Baltimore, MD (United States)
Publication Date:
Research Org.:
International Society for Optical Engineering, Washington, DC (United States)
OSTI Identifier:
552191
Report Number(s):
CONF-9410155-Vol.2428
CNN: Grant N00014-93-1-0128; TRN: 98:009006
Resource Type:
Conference
Resource Relation:
Conference: 26. annual Boulder damage symposium: laser-induced damage in optical materials, Boulder, CO (United States), 24-26 Oct 1994; Other Information: PBD: [1995]; Related Information: Is Part Of Laser-induced damage in optical materials: 1994. Twenty-sixth annual Boulder damage symposium, proceedings; Bennett, H.E.; Guenther, A.H.; Kozlowski, M.R.; Newnam, B.E.; Soileau, M.J. [eds.]; PB: 722 p.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; CHARGED-PARTICLE TRANSPORT; DIAMONDS; TESTING; SEMICONDUCTOR MATERIALS; ELECTRON BEAMS

Citation Formats

Cropper, A D, Moore, D J, Scott, C S, and Green, R. An electron beam induced current study of gallium nitride and diamond materials. United States: N. p., 1995. Web.
Cropper, A D, Moore, D J, Scott, C S, & Green, R. An electron beam induced current study of gallium nitride and diamond materials. United States.
Cropper, A D, Moore, D J, Scott, C S, and Green, R. 1995. "An electron beam induced current study of gallium nitride and diamond materials". United States.
@article{osti_552191,
title = {An electron beam induced current study of gallium nitride and diamond materials},
author = {Cropper, A D and Moore, D J and Scott, C S and Green, R},
abstractNote = {The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide-bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in Gallium Nitride (GaN) and Diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behavior of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in Gallium Nitride (GaN) and Diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experimental techniques because it is based on a fast transient electron beam probe created from a high speed, laser pulsed photoemission system.},
doi = {},
url = {https://www.osti.gov/biblio/552191}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Dec 31 00:00:00 EST 1995},
month = {Sun Dec 31 00:00:00 EST 1995}
}

Conference:
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