Contamination control in semiconductor manufacturing and particle deposition on wafer surfaces
- Univ. of Minnesota, Minneapolis, MN (United States)
Particulate contamination is an important problem in semiconductor device manufacturing. Very large scale integrated circuit (VLSI) devices such as the current generation of 16 megabit DRAM (dynamic random access memory) have typical device feature sizes on the order of 0.5 {mu}m. Particles as small as 0.05 {mu}m can cause a killer defect to form and the loss of product yield. Contaminant particles can deposit on the wafer surface from the gas or liquid in which they are suspended by the process of diffusion, sedimentation, and electrostatic attraction. In the case of deposition of gas-borne particles (aerosols), additional effects due of thermophoresis or diffusiophoresis can occur. This paper discusses the fundamental issues in contamination control in semiconductor manufacturing and the mechanisms of particle depositions on wafer surfaces taking into account the different deposition mechanisms. Results of the theoretical calculation will be compared with the available experimental data.
- Research Organization:
- International Society for Optical Engineering, Washington, DC (United States)
- OSTI ID:
- 552094
- Report Number(s):
- CONF-9510106-Vol.2714; TRN: 97:005737-0072
- Resource Relation:
- Conference: 27. annual symposium on optical materials for high power lasers, Boulder, CO (United States), 30 Oct - 1 Nov 1995; Other Information: PBD: [1996]; Related Information: Is Part Of Laser-induced damage in optical materials: 1995. Twenty-seventh annual Boulder damage symposium, proceedings; Bennett, H.E.; Guenther, A.H.; Kozlowski, M.R.; Newnam, B.E.; Soileau, M.J. [eds.]; PB: 794 p.
- Country of Publication:
- United States
- Language:
- English
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