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Title: Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1984-31 October 1984

Technical Report ·
OSTI ID:5513196

This report describes the results of research done by the Institute of Energy Conversion for the Solar Energy Research Institute in 1984 on high-efficiency, stable, amorphous silicon solar cells, fabricated by chemical vapor deposition (CVD) from disilane at high growth rates. The kinetics of CVD with higher order silanes were modelled for a tubular reactor with static substrates. A gas-phase reaction network was adopted, based on published silylene insertion and decomposition pathways. Mass balances for hydrogen and all saturated silanes through octasilane were derived. Boron-doped a-Si:H p-layers were deposited by CVD at 200/sup 0/ to 250/sup 0/C. Band gap and conductivity depended strongly on the diborane fraction in the feed gas, independent of substrate temperature. The effects of intrinsic layer deposition temperature and growth rate on material properties and device performance were studied. Cell parameters of p-i-n cells were correlated with i-layer deposition temperature and growth rate. Fill factor and short-circuit current depended on deposition conditions, while open-circuit voltage did not. Effects of diborane additions to the feed gas during i-layer deposition were studied. Experimental evidence and calculations indicate high resistance at the back contact.

Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5513196
Report Number(s):
SERI/STR-211-2711; ON: DE85012148
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English