Native oxide encapsulation for annealing boron-implanted Hg/sub 1-//sub x-italic/Cd/sub x-italic/Te

Journal Article · Mon Aug 25 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97117· OSTI ID:5503007

Kao, T; Sigmon, T W

We report for the first time the successful use of the Hg/sub 1-//sub x-italic/Cd/sub x-italic/Te native oxide as an encapsulation layer for an annealing process designed to activate an implanted impurity. The annealing process does not require Hg over pressure and consists of both furnace (--200 /sup 0/C) and rapid thermal (--320 /sup 0/C) anneals. Using 2.2 MeV /sup 4/He/sup +/ ion channeling measurements, we show that the implantation damage can be annealed out without loss of Hg from the substrate. Also, both secondary ion mass spectrometry and differential van der Pauw measurements indicate that the resulting electron concentration profile closely matches that of the implanted /sup 11/B profile and the electrical junction is found to lie close to the expected position of the metallurgical junction.

• Research Organization: Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
• OSTI ID: 5503007
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 49:8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
PHYSICAL RADIATION EFFECTS
MERCURY TELLURIDES
ANNEALING
BORON 11
BORON IONS
ELECTRON DENSITY
HELIUM IONS
HIGH TEMPERATURE
IMPURITIES
ION CHANNELING
ION IMPLANTATION
ION SPECTROSCOPY
OXIDES
SEMICONDUCTOR JUNCTIONS
BORON ISOTOPES
CADMIUM COMPOUNDS
CHALCOGENIDES
CHANNELING
CHARGED PARTICLES
HEAT TREATMENTS
IONS
ISOTOPES
JUNCTIONS
LIGHT NUCLEI
MERCURY COMPOUNDS
NUCLEI
ODD-EVEN NUCLEI
OXYGEN COMPOUNDS
RADIATION EFFECTS
SPECTROSCOPY
STABLE ISOTOPES
TELLURIDES
TELLURIUM COMPOUNDS
360605* - Materials- Radiation Effects