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Title: Radiation-induced defects in dense phases of crystalline and amorphous SiO sub 2

Journal Article · · Physical Review (Section) B: Condensed Matter; (USA)
 [1];  [2]
  1. Centre National d'Etudes des Telecommunications, Boite Postale No. 98, 38243 Meylan CEDEX, France (FR)
  2. Sektion Physik, Wilhelm-Pieck-Universitat Rostock, Universitatsplatz 3, DDR-2500 Rostock, German Democratic Republic

We have studied electron-spin resonance in unirradiated and irradiated samples of naturally occurring stishovite. An unidentified central resonance ({ital g}{similar to}2.0030) with weak hyperfine lines is observed with a density 6{times}10{sup 14} per gram in unirradiated samples. Irradiation induces two sets of hyperfine lines, one sharp (1 gauss peak to peak) and one broad (14 gauss peak to peak) with hyperfine parameters {ital A}{sub {parallel}}=590 gauss, {ital A}{sub {perpendicular}}=457 gauss (sharp) and {ital A}{sub {parallel}}=525{sub {minus}15}{sup +0} gauss, {ital A}{sub {perpendicular}}=503{sub {minus}0}{sup +75} gauss, (broad). The latter set is consistent with {ital E}{sub 1}{sup {prime}} centers in densified, amorphous SiO{sub 2} with {rho}{ge}3.2 gm cm{sup {minus}3} whilst we identify the former with {ital E}{sub 1}{sup {prime}} defects in crystalline Stishovite. The hyperfine parameters for the crystalline phase cannot be interpreted simply in terms of the usual {ital s}-{ital p} electron model.

OSTI ID:
5489968
Journal Information:
Physical Review (Section) B: Condensed Matter; (USA), Vol. 40:10; ISSN 0163-1829
Country of Publication:
United States
Language:
English