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Title: New devices using ferroelectric thin films

Abstract

Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several new devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magneto-optic thin film devices. Some properties of PZT thin films and of new devices based on those properties are described in this paper. 15 refs., 5 figs., 1 tab.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
DOE/DP
OSTI Identifier:
5485384
Report Number(s):
SAND-89-1607C; CONF-891205-1
ON: DE90000789
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: IEEE international electron devices meeting, Washington, DC (USA), 3-6 Dec 1989
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; PLZT; BIREFRINGENCE; PHOTOCURRENTS; PHOTOSENSITIVITY; PZT; FERROELECTRIC MATERIALS; OPTICAL PROPERTIES; OPTICAL SCANNERS; THIN FILM STORAGE DEVICES; THIN FILMS; CURRENTS; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; MEMORY DEVICES; OPTICAL EQUIPMENT; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; REFRACTION; SENSITIVITY; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS; 360603* - Materials- Properties; 426000 - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Land, C. E., Butler, M. A., and Martin, S. J. New devices using ferroelectric thin films. United States: N. p., 1989. Web. doi:10.1109/IEDM.1989.74272.
Land, C. E., Butler, M. A., & Martin, S. J. New devices using ferroelectric thin films. United States. https://doi.org/10.1109/IEDM.1989.74272
Land, C. E., Butler, M. A., and Martin, S. J. 1989. "New devices using ferroelectric thin films". United States. https://doi.org/10.1109/IEDM.1989.74272. https://www.osti.gov/servlets/purl/5485384.
@article{osti_5485384,
title = {New devices using ferroelectric thin films},
author = {Land, C. E. and Butler, M. A. and Martin, S. J.},
abstractNote = {Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several new devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magneto-optic thin film devices. Some properties of PZT thin films and of new devices based on those properties are described in this paper. 15 refs., 5 figs., 1 tab.},
doi = {10.1109/IEDM.1989.74272},
url = {https://www.osti.gov/biblio/5485384}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1989},
month = {Sun Jan 01 00:00:00 EST 1989}
}

Conference:
Other availability
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