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Title: Modeling and simulation of interactions of transient ionizing radiation with electronics

Conference · · Transactions of the American Nuclear Society; (USA)
OSTI ID:5480541

Electronic devices frequently are designed to withstand environments in which transient ionizing radiation may be present. Devices so designed must be tested to determine whether they indeed can withstand such radiation. Electron linear accelerators, including Rensselaer Polytechnic Institute's (RPI) Linac, are used for such testing. To understand the interactions that take place, it is desirable to model and simulate the phenomena involved. At RPI, there is an ongoing effort in modeling and simulation to complement and support the experimental program at the Linac. Modeling and simulation at RPI is directed toward predicting the types of radiation effects that occur when transient measurements are made at the RPI Linac. The combination of device and circuit modeling provides both insight and confidence in the merits of the models developed.

OSTI ID:
5480541
Report Number(s):
CONF-880601-; CODEN: TANSA; TRN: 89-027819
Journal Information:
Transactions of the American Nuclear Society; (USA), Vol. 56; Conference: American Nuclear Society annual meeting, San Diego, CA (USA), 12-16 Jun 1988; ISSN 0003-018X
Country of Publication:
United States
Language:
English