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Title: Polycrystalline photovoltaic cell

Patent ·
OSTI ID:5424099

A photovoltaic cell is disclosed, having an electrically conductive substrate, which may be glass having a film of conductive tin oxide; a first layer containing a suitable semiconductor, which layer has a first component film with an amorphous structure and a second component film with a polycrystalline structure; a second layer forming a heterojunction with the first layer; and suitable electrodes where the heterojunction is formed from a solution containing copper, the amorphous film component is superposed above an electrically conductive substrate to resist permeation of the copper-containing material to shorting electrical contact with the substrate. The penetration resistant amorphous layer permits a variety of processes to be used in forming the heterojunction with even very thin layers (1-6 /SUB u/ thick) of underlying polycrystalline semiconductor materials. In some embodiments, the amorphous-like structure may be formed by the addition of aluminum or zirconium compounds to a solution of cadmium salts sprayed over a heated substrate.

Assignee:
Photon Power, Inc.
Patent Number(s):
US 4412091
OSTI ID:
5424099
Resource Relation:
Patent File Date: Filed date 4 Mar 1980; Other Information: PAT-APPL-127149
Country of Publication:
United States
Language:
English