Semiconductor laser
Patent
·
OSTI ID:5421318
A new laser structure having self-aligned junction stripe geometry grown by the MO CVD process is disclosed. The laser is grown on a groove-etched substrate and has a DH structure with a small V-shaped active region. A current path in the V-shaped region is formed using anomalous zinc diffusion during growth, which allows a broad area metal contact for both sides of the wafer.
- Assignee:
- Sony Corporation (Japan)
- Patent Number(s):
- US 4503539
- OSTI ID:
- 5421318
- Resource Relation:
- Patent Priority Date: Priority date 13 Apr 1984, Japan; Other Information: PAT-APPL-599224
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single mode laser with a V-shaped active layer grown by metalorganic chemical vapor deposition: A v-shaped double heterostructure laser
Proton-defined stripe geometry InGaAsP/InP double heterostructure lasers
Method for fabricating junction lasers having lateral current confinement
Journal Article
·
Tue Sep 01 00:00:00 EDT 1981
· J. Appl. Phys.; (United States)
·
OSTI ID:5421318
Proton-defined stripe geometry InGaAsP/InP double heterostructure lasers
Journal Article
·
Fri Oct 01 00:00:00 EDT 1982
· Chin. Phys.; (United States)
·
OSTI ID:5421318
+2 more
Method for fabricating junction lasers having lateral current confinement
Patent
·
Tue Mar 25 00:00:00 EST 1980
·
OSTI ID:5421318