Modeling of damage evolution during ion implantation into silicon: A Monte Carlo approach

Book · Sat Nov 01 00:00:00 EST 1997

OSTI ID:541114

Tian, S; Morris, M; Morris, S J; Obradovic, B; Tasch, A F ^[1]

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1. Univ. of Texas, Austin, TX (United States)

The authors present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF{sub 2} implants into single crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

• OSTI ID: 541114
• Report Number(s): CONF-961202-; ISBN 1-55899-343-6; TRN: 97:019620
• Resource Relation: Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Microstructure evolution during irradiation; Robertson, I.M. [ed.] [Univ. of Illinois, Urbana, IL (United States)]; Was, G.S. [ed.] [Univ. of Michigan, Ann Arbor, MI (United States)]; Hobbs, L.W. [ed.] [Massachusetts Inst. of Tech., Cambridge, MA (United States)]; Diaz de la Rubia, T. [ed.] [Lawrence Livermore National Lab., CA (United States)]; PB: 752 p.; Materials Research Society symposium proceedings, Volume 439
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
MATHEMATICAL MODELS
ARSENIC IONS
BORON IONS
PHOSPHORUS IONS
BORON FLUORIDES
AMORPHOUS STATE
THEORETICAL DATA