Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs
Conference
·
OSTI ID:541090
- Helsinki Univ. of Technology, Espoo (Finland). Lab. of Physics
A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradition-induced As-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the As-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the As antisite in electron-irradiated GaAs.
- OSTI ID:
- 541090
- Report Number(s):
- CONF-960450-; ISBN 0-7803-3179-6; TRN: 97:019602
- Resource Relation:
- Conference: 10. international parallel processing symposium, Honolulu, HI (United States), 15-19 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Semiconducting and insulating materials 1996: Proceedings; PB: [395] p.
- Country of Publication:
- United States
- Language:
- English
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