Aluminium segregation of TiAl during single crystal growth

Journal Article · Mon Sep 15 00:00:00 EDT 1997 · Scripta Materialia

DOI:https://doi.org/10.1016/S1359-6462(97)00177-2· OSTI ID:540973

Bi, Y J; Abell, J S ^[1]

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1. Univ. of Birmingham (United Kingdom). School of Metallurgy and Materials

{gamma}-TiAl single crystals have been successfully prepared by an induction-heated cold crucible Czochralski technique which offers more flexibility than vertical float zoning. Compositional analysis of the Czochralski grown single crystals indicates a homogeneous composition after initial transition; and the average composition is close to the peritectic composition. However, {gamma}-TiAl single crystals prepared by vertical float zoning show a small aluminium segregation profile along the growth direction; and the average composition of the as-grown crystals is close to that of the starting alloy. Compositional analysis further demonstrated the banded structure with alternative single {gamma}-phase and {alpha}{sub 2} + {gamma} lamellar regions in the vertical float zoned Ti-54 at.% Al.

• OSTI ID: 540973
• Journal Information: Scripta Materialia, Vol. 37, Issue 6; Other Information: PBD: 15 Sep 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
SEGREGATION
TITANIUM ALLOYS
ALUMINIUM ALLOYS
INTERMETALLIC COMPOUNDS
MONOCRYSTALS
PHASE DIAGRAMS
CZOCHRALSKI METHOD
ZONE MELTING
CHEMICAL COMPOSITION