Tandem photovoltaic solar cell with III-V diffused junction booster cell
This patent describes a GaAs/GaSb tandem solar cell having improved conversion efficiency. It comprises: a GaAs upper cell having a predetermined bandgap selected for optimal performance of the tandem solar cell; a GaSb booster cell positioned beneath the GaAs upper cell to receive light transmitted through the GaAs upper cell and responsive to such light; and light conditioning means associated with the upper cell and the booster cell for achieving and energy conversion efficiency of at least 31% AMO. This patent also describes the cell as defined in claim 2, wherein the light conditioning means includes a prismatic coverglass for optically eliminating grid line obscuration losses on at least the upper cell and a concentrating lens for focusing solar energy onto an upper surface of the upper cell.
- Assignee:
- Boeing Co., Seattle, WA (United States)
- Patent Number(s):
- US 5091018; A
- Application Number:
- PPN: US 7-523710
- OSTI ID:
- 5407678
- Resource Relation:
- Patent File Date: 14 May 1990
- Country of Publication:
- United States
- Language:
- English
Similar Records
30% efficient three junction solar cells for space concentrator modules. Final report 1 September 1997-31 May 1998
Tandem photovoltaic solar cell with III-V diffused junction booster cell
Related Subjects
SEMICONDUCTOR JUNCTIONS
ENERGY EFFICIENCY
SOLAR CELL ARRAYS
DESIGN
SOLAR ENERGY CONVERSION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDE SOLAR CELLS
MATERIALS TESTING
ANTIMONIDES
ANTIMONY COMPOUNDS
CONVERSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ENERGY CONVERSION
EQUIPMENT
GALLIUM COMPOUNDS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
TESTING
140501* - Solar Energy Conversion- Photovoltaic Conversion