Characterization of sputtered barium strontium titanate and strontium titanate-thin films
- Materials Research and Strategic Technologies, Motorola Semiconductor Products Sector, 2200 W. Broadway Road, Mail Drop M360, Mesa, Arizona 85202 (United States)
- Advanced Materials Group, Materials Research and Strategic Technologies, 3501 Ed Bluestein Boulevard, Mail Drop K10, Austin, Texas 78721 (United States)
- Matsushita Electronics Corporation, Electronics Research Laboratory, Corporate Technology Center, Takatsuki, Osaka, 569 (Japan)
- Chiba Institute for Super Materials, Ulvac Japan, 523 Yokota Sanbu-Machi Sanbu-Gun, Chiba Prefecture, 289-12 (Japan)
Sputtered Ba{sub 1{minus}x}Sr{sub x}TiO{sub 3} (BST) and SrTiO{sub 3} (STO) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties. Specific capacitance values included a high of 96fF/{mu}m{sup 2} for BST films deposited of 600{degree}C and a high of 26fF/{mu}m{sup 2} for STO films deposited at 400{degree}C. Leakage current densities at 3.3 V for the most part varied from mid 10{sup {minus}8} to mid 10{sup {minus}6}A/cm{sup 2}. All of the dielectrics are polycrystalline, although the lowest temperature STO films have a nearly amorphous layer which impacts their capacitance. Grain size increases with deposition temperature, which correlates to higher dielectric constants. The lattice parameter of the BST films is larger than that of bulk samples. Capacitance, leakage, breakdown, and lifetime results are reported. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 538425
- Journal Information:
- Journal of Applied Physics, Vol. 82, Issue 5; Other Information: PBD: Sep 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation
Dielectric properties of barium strontium titanate thick films prepared by electrophoretic deposition