Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Department of Electronic Materials Engineering, Australian National University, Canberra, ACT 0200 (Australia)
We have investigated the preferred substitution of Ge in InP by altering the local stoichiometry of the InP substrate. By co-implanting P with Ge to create a group V-rich environment, we directly observed an enhancement of the Ge substituting the In sublattice. A corresponding increase in the n-type conductivity by as much as three times was also observed in the Ge and P co-implanted sample. However, due to the altered local stoichiometry, the Ge solubility in InP was reduced by a factor of 2. The residual crystalline damage in the P co-implanted InP after annealing was also decreased due to the compensation of the nonstoichiometry related damage by the excess P in the middle of the implanted region. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 538366
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 7; Other Information: PBD: Aug 1997
- Country of Publication:
- United States
- Language:
- English
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