Niobium and niobium nitride contacts on semiconducting material

Patent · Fri Jun 30 00:00:00 EDT 1989

OSTI ID:5370300

Cukauskas, E; Carter, W; Pond, J; Newman, H

This invention related generally to a metallization layer of niobium or niobium nitride on a semiconductor in an integrated-circuit structure, which can function from the superconducting-temperature regime to above room temperature. Niobium or niobium nitride is deposited onto a heated gallium arsenide substrate. This metallization will maintain chemical stability after high-temperature post processing. These materials provide a low-resistivity metallization suitable for Schottky contacts used over a wide operating temperature range and are superconducting at low temperatures.

• Research Organization: Department of the Navy, Washington, DC (USA)
• Assignee: Department of the Navy, Washington, DC (USA)
• Patent Number(s): A US 7-374101
• OSTI ID: 5370300
• Resource Relation: Other Information: This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of application available NTIS
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
SCHOTTKY BARRIER DIODES
INTEGRATED CIRCUITS
SUPERCONDUCTORS
NIOBIUM
DEPOSITION
NIOBIUM NITRIDES
COATINGS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
STABILITY
SUBSTRATES
SUPERCONDUCTIVITY
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FILMS
GALLIUM COMPOUNDS
METALS
MICROELECTRONIC CIRCUITS
NIOBIUM COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties
360204 - Ceramics
Cermets
& Refractories- Physical Properties