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Title: MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP

Abstract

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

Authors:
; ; ; ; ;  [1]
  1. AIXTRON GmbH, Aachen (Germany)
Publication Date:
OSTI Identifier:
536261
Report Number(s):
CONF-960498-
ISBN 0-7803-3283-0; TRN: IM9745%%100
Resource Type:
Book
Resource Relation:
Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; VAPOR PHASE EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; ALUMINIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; ALUMINIUM PHOSPHIDES; ORGANOMETALLIC COMPOUNDS; ARSENIC COMPOUNDS; PHOSPHINES; GAS FLOW; EXPERIMENTAL DATA

Citation Formats

Beccard, R, Schmitz, D, Knauf, J, Lengeling, G, Schulte, F, and Juergensen, H. MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP. United States: N. p., 1996. Web.
Beccard, R, Schmitz, D, Knauf, J, Lengeling, G, Schulte, F, & Juergensen, H. MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP. United States.
Beccard, R, Schmitz, D, Knauf, J, Lengeling, G, Schulte, F, and Juergensen, H. 1996. "MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP". United States.
@article{osti_536261,
title = {MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP},
author = {Beccard, R and Schmitz, D and Knauf, J and Lengeling, G and Schulte, F and Juergensen, H},
abstractNote = {Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.},
doi = {},
url = {https://www.osti.gov/biblio/536261}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}

Book:
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