Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:536230

Lescaut, B; Nissim, Y I; Bresse, J F ^[1]

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1. France Telecom/CNET/PAB, Bagneux (France). Lab. de Bagneux

Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An integrated process using a combination of surface cleaning and photochemical dielectric encapsulation is proposed for passivation. The passivation of InGaAs with a short ammonia plasma cleaning has been obtained. The treated surface has been protected with a photochemical dielectric encapsulation. MIS structures fabricated on treated InGaAs surfaces have shown a low density of interface traps and a small hysteresis. This process is an integration of two cold processes that enable its use at the end of the process fabrication of circuits.

• OSTI ID: 536230
• Report Number(s): CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%69
• Resource Relation: Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
PASSIVATION
INDIUM ARSENIDES
GALLIUM ARSENIDES
ELECTRICAL EQUIPMENT
ELECTRON CYCLOTRON-RESONANCE
HYDROGEN
AMMONIA
SILANES
SILICON NITRIDES
PHOTOLUMINESCENCE
CAPACITANCE
ELECTRIC POTENTIAL
EXPERIMENTAL DATA