Investigation of macroscopic uniformity during CH{sub 4}/H{sub 2} reactive ion etching of InP and improvement using a guard ring
Book
·
OSTI ID:536183
- Heinrich-Hertz-Inst. fuer Nachrichtentechnik Berlin GmbH (Germany)
The authors have found that CH{sub 4}/H{sub 2}-RIE of InP tends to produce macroscopically nonuniform etching which is more prominent for higher gas pressures and lightly masked wafers. Presumably the enhanced etch attack near the wafer edge is caused by excess reactants originating from the surrounding non-etched cathode surface. The reduction of the gas pressure as well as the use of an InP getter plate considerably decrease the degree of nonuniformity. The most effective and practicable way however to achieve a nearly perfect etch uniformity across the wafer is the application of a guard ring.
- OSTI ID:
- 536183
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%22
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:536183