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Title: Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact

Abstract

An electrolyte-semiconductor contact is used to study the conductivity of epitaxial layers and single crystals of n-type indium phosphide obtained by gas transport. Some of the specimens were alloyed with tin and sulfur. The volt-farad characteristics are used to find the potentials of planar zones, which amount to 0.8-1.3 V for different electrolytes. Values of concentration of charge carriers calculated from measured values of capacitance of the electrolyte-indium-phosphide contact showed good agreement with measurements of the Hall effect on single crystals in the range 10/sup 16/-10/sup 18/ cm/sup -3/. The use of measurements of the capacitance of the electrolyte-semiconductor contact with simultaneous etching of a local region made it possible to study the electron distribution in epitaxial layers of indium phosphide.

Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
5355181
Resource Type:
Journal Article
Journal Name:
Sov. Phys. J. (Engl. Transl.); (United States)
Additional Journal Information:
Journal Volume: 30:5; Other Information: Translated from Izv. Vyssh. Uchebon. Zaved., Fiz.; 30: No. 5, 71-74(May 1987)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM PHOSPHIDES; CARRIER DENSITY; ETCHING; CAPACITANCE; CHARGE DISTRIBUTION; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; ELECTROLYTES; ELECTRON DENSITY; EPITAXY; HALL EFFECT; HYDROCHLORIC ACID; MERCURY; METALLURGICAL EFFECTS; N-TYPE CONDUCTORS; PHASE STUDIES; PHOSPHORIC ACID; SULFUR; TELLURIUM; TIN; ELECTRICAL PROPERTIES; ELEMENTS; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; INORGANIC ACIDS; MATERIALS; METALS; NONMETALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SURFACE FINISHING; 360603* - Materials- Properties; 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Asanov, O M, Gaman, V I, Zorkal'tseva, N N, Korableva, T V, and Petrova, N G. Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact. United States: N. p., 1987. Web. doi:10.1007/BF00900095.
Asanov, O M, Gaman, V I, Zorkal'tseva, N N, Korableva, T V, & Petrova, N G. Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact. United States. https://doi.org/10.1007/BF00900095
Asanov, O M, Gaman, V I, Zorkal'tseva, N N, Korableva, T V, and Petrova, N G. 1987. "Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact". United States. https://doi.org/10.1007/BF00900095.
@article{osti_5355181,
title = {Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact},
author = {Asanov, O M and Gaman, V I and Zorkal'tseva, N N and Korableva, T V and Petrova, N G},
abstractNote = {An electrolyte-semiconductor contact is used to study the conductivity of epitaxial layers and single crystals of n-type indium phosphide obtained by gas transport. Some of the specimens were alloyed with tin and sulfur. The volt-farad characteristics are used to find the potentials of planar zones, which amount to 0.8-1.3 V for different electrolytes. Values of concentration of charge carriers calculated from measured values of capacitance of the electrolyte-indium-phosphide contact showed good agreement with measurements of the Hall effect on single crystals in the range 10/sup 16/-10/sup 18/ cm/sup -3/. The use of measurements of the capacitance of the electrolyte-semiconductor contact with simultaneous etching of a local region made it possible to study the electron distribution in epitaxial layers of indium phosphide.},
doi = {10.1007/BF00900095},
url = {https://www.osti.gov/biblio/5355181}, journal = {Sov. Phys. J. (Engl. Transl.); (United States)},
number = ,
volume = 30:5,
place = {United States},
year = {Sun Nov 01 00:00:00 EST 1987},
month = {Sun Nov 01 00:00:00 EST 1987}
}