Equipment simulation of selective tungsten deposition

Journal Article · Sat Feb 01 00:00:00 EST 1992 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2069259· OSTI ID:5329643

Werner, C; Ulacia, J I; Hopfmann, C; Flynn, P ^[1]

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1. Siemens AG, ZFE SPT 33, Otto-Hahn-Ring 6, D-8000 Munich 83 (DE)

This paper presents the numerical modeling of a cold wall reactor for selective tungsten chemical vapor deposition. In a two dimensional simulation the mass and heat transfer equations were solved considering the five chemical species H{sub 2}, WF{sub 6}, HF, WF{sub x}, and SiF{sub y}. Detailed models for multicomponent diffusion and for the autocatalytic tungsten nucleation process were implemented. Model results are in good agreement with experimental findings. The simulations are used to study the impact of reactor design on selectivity.

• OSTI ID: 5329643
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 139:2; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CHEMICAL REACTORS
DESIGN
TWO-DIMENSIONAL CALCULATIONS
TUNGSTEN
CHEMICAL VAPOR DEPOSITION
ELECTROCHEMICAL COATING
HEAT TRANSFER
HYDROFLUORIC ACID
HYDROGEN
MASS TRANSFER
NUCLEATION
TUNGSTEN FLUORIDES
CHEMICAL COATING
DEPOSITION
ELEMENTS
ENERGY TRANSFER
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
METALS
NONMETALS
REFRACTORY METAL COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
300505* - Fuel Cells- Electrochemistry
Mass Transfer & Thermodynamics
360201 - Ceramics
Cermets
& Refractories- Preparation & Fabrication
400400 - Electrochemistry