Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures
- Fraunhofer-Institut fuer Schicht- und Oberflaechentechnik (FhG-IST), Bienroder Weg 54 E, D-38108 Braunschweig (Germany)
The piezoresistivity of polycrystalline p-type diamond films has been studied. The films were grown by microwave plasma assisted chemical vapor deposition and {ital in situ} doped with different concentrations of boron. A four-point electrical measurement was performed to evaluate the film resistivity change upon straining in a four-point bending beam setup. Films were glued directly onto a stainless steel beam and the silicon substrates were selectively removed. A gauge factor (relative change of the resistivity divided by the elastic strain) of about 690 under 100 microstrains was obtained at room temperature for a film doped with 32 ppm boron. With increasing temperature and dopant concentration the gauge factor increases. The experimental results obtained are discussed. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 531740
- Journal Information:
- Journal of Applied Physics, Vol. 82, Issue 2; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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