Microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping of MBE-grown samples
- Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, D-10623 Berlin (Federal Republic of Germany)
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
In this study we report on the microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping. Molecular beam epitaxy grown GaSb(001) layers capped with a protective Sb layer were transferred through the atmosphere into an UHV-analysis system and investigated by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). After thermal desorption of the capping layer clear c(2{times}6) LEED patterns were observed. STM images show flat surface areas with a rowlike, somewhat disordered structure. High-resolution images resolve individual Sb dimers on the surface. The surface is covered by an incomplete layer of dimerized Sb, adsorbed on a complete second layer of Sb, which is also dimerized in that regions not covered by the fractional Sb top layer. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 530197
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 55, Issue 23; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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