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Title: Analysis of features of the charge transfer mechanism in melts of copper and silver chalcogenides based on studies of electroconductivity and the hall effect

Journal Article · · High Temp. (Engl. Transl.); (United States)
OSTI ID:5288028

Systematic studies were made of the temperature dependence of the Hall effect in the melting-point and liquid-state regions of copper and silver chalcogenides. The experimental data obtained was used together with simple relations of free electron theory to evaluate changes in charge carrier concentration and carrier mobility during melting and heating of melts of A/sub 2//sup I/B/sup VI/ compounds (A/sup I/ is Cu, Ag; B/sup VI/ is S, Se, Te). The thermal width of the forbidden band in the solid phase was calculated, along with the activation energy for thermal generation of charge carriers in the liquid phase. The activational character of the thermal generation of charge carriers in melts of silver sulfide and silver selenide was demonstrated. An explanation is given for the empirically observed reduction in electrical conductivity during heating of melts of Ag/sub 2/S and Ag/sub 2/Se. It was established that melts of the investigated chalcogenides of copper and silver can be classed as liquid semiconductors

Research Organization:
Moscow Institute of Electronics (USSR)
OSTI ID:
5288028
Journal Information:
High Temp. (Engl. Transl.); (United States), Vol. 25:3; Other Information: Translated from Teplofiz. Vys. Temp.; 25: No. 3, 497-503(May-Jun 1987)
Country of Publication:
United States
Language:
English