skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Optical absorption in amorphous silicon

Book ·
OSTI ID:527685
; ; ;  [1]
  1. Univ. of Toronto, Ontario (Canada). Dept. of Electrical and Computer Engineering

The role that disorder plays in shaping the form of the optical absorption spectrum of hydrogenated amorphous silicon is investigated. Disorder leads to a redistribution of states, which both reduces the Tauc gap and broadens the absorption tail. The observed relationship between the Tauc gap and the breadth of the absorption tail is thus explained.

OSTI ID:
527685
Report Number(s):
CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%113
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
Country of Publication:
United States
Language:
English